DocumentCode :
996751
Title :
Addendum: Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique
Author :
Kohn, Erhard ; Colquhoun, A.
Volume :
13
Issue :
6
fYear :
1977
Firstpage :
168
Keywords :
insulated gate field effect transistors; GaAs; enhancement mode MOST; self aligned gate; semiinsulating substrate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770120
Filename :
4249265
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=996751
