Title :
Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells
Author :
Rodbell, Kenneth P. ; Heidel, David F. ; Tang, Henry H K ; Gordon, Michael S. ; Oldiges, Phil ; Murray, Conal E.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights
Abstract :
Experimental data are presented showing that low energy (<2 MeV) proton irradiation can upset exploratory 65 nm node, silicon-on-insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices.
Keywords :
alpha-particle effects; proton effects; silicon-on-insulator; SOI latches; alpha particle SER data; low energy proton irradiation; low-energy proton-induced single-event-upsets; memory cells; silicon-on-insulator circuits; Alpha particles; Circuit simulation; Error analysis; Helium; Ionization; Latches; Neutrons; Protons; Sea measurements; Silicon on insulator technology; Alpha particles; direct ionization; protons; radiation effects; simulations; soft error rate;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.909845
