Title :
High rate deposition of iron-oxide thin films by reactive sputtering
Author :
Ouchi, H. ; Umesaki, M.
Author_Institution :
Misubishi Electric Co., Hyogo, Japan
fDate :
9/1/1983 12:00:00 AM
Abstract :
For the preparation of γ-Fe2O3thin films, an improved process utilizing a sputtering technique is described. Iron-oxide thin films were prepared by reactive sputtering of an Fe target in Ar+O2atmosphere. Sputtered α-Fe2O3thin films were deposited at about ten times higher rate than the conventional method. Next, α-Fe2O3films were reduced in an hydrogen atmosphere. Typical reduced films showed a high squareness of 0.84 and a coercive force of 350 Oe.
Keywords :
Magnetic recording/recording materials; Sputtering; Atmosphere; Inorganic materials; Iron; Magnetic films; Magnetic properties; Phase detection; Sputtering; Substrates; Temperature dependence; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1983.1062618