DocumentCode
996847
Title
High-power pulsed and c.w. silicon double-drift IMPATT amplifiers at X-band
Author
Braddock, P.W. ; Hodges, R.D.
Author_Institution
RSRE, Great Malvern, UK
Volume
13
Issue
7
fYear
1977
Firstpage
176
Lastpage
177
Abstract
The letter presents some reflection-amplifier results for Si double-drift pulsed and c.w. IMPATTs. Peak r.f. powers of up to 11.6 and 16.5 W with instantaneous (¿1 dB) bandwidths ~20% at gains >6 dB have been obtained at 10 GHz with 1- and 2-diode combinations when bias modulated with a pulsewidth of 4 ¿s and p.r.f. of 1 kHz. A 2-diode c.w. combination has given a power of 7 W (c.w.) at 10.7 GHz with a gain of 6.5 dB and instantaneous (¿1 dB) bandwidth of 400 MHz.
Keywords
IMPATT diodes; microwave amplifiers; pulse amplifiers; solid-state microwave circuits; 10 GHz; 10.7 GHz; CW IMPATT diode; IMPATT amplifiers; RF powers; Si; X-band; bias modulated; double drift pulsed IMPATT diode; microwave amplifiers; reflection amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770129
Filename
4249275
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