Title :
Observed behaviour of high-efficiency impatt diodes over a 30% frequency range
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
High-power high-efficiency oscillator operation of hi-lo-doped GaAs impatt diodes has been obtained over a frequency range extending from 7.5 to 12 GHz. Arrays of diodes have been used to obtain up to 7.7 W at 22% efficiency. From the measured variation of output power with load resistance, it is concluded that these diodes are operating in the premature collection mode.
Keywords :
IMPATT diodes; 7.5 to 12 GHz; GaAs IMPATT diodes; high efficiency oscillator; output power; premature collection mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770131
