Title :
Al/sub 0.10/Ga/sub 0.90/As-GaAs microcoolers
Author :
Jizhi Zhang ; Anderson, N.G. ; Kei May Lau
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amberst, MA, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
GaAs-based microcoolers were fabricated and tested. An Al/sub 0.10/Ga/sub 0.90/As layer grown on GaAs, having a lower thermal conductivity and comparable electrical conductivity to that of the substrate, was employed in the microcooler structure to reduce the heat conduction back from the heat sink. Maximum cooling temperatures of 0.87 /spl deg/C and 2.3 /spl deg/C were obtained at ambient temperatures of 25 /spl deg/C and 100 /spl deg/C, respectively, from 60 × 60 μm microcoolers.
Keywords :
III-V semiconductors; aluminium compounds; cooling; electrical conductivity; heat conduction; micromechanical devices; thermal conductivity; thermal management (packaging); thermionic electron emission; thermoelectric devices; 0.87 C; 100 C; 2.3 C; 25 C; 60 micron; AlGaAs-GaAs; electrical conductivity; film cooler; heat conduction; heat sink; in situ cooling; maximum cooling temperatures; microcoolers; substrate; thermal conductivity; thermionic; thermoelectric; Aluminum; Electronics cooling; Gallium arsenide; Heat sinks; Laser stability; Resistance heating; Semiconductor lasers; Semiconductor superlattices; Thermal conductivity; Thermoelectricity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.828568
