Title :
20 GHz bandwidth 1.5 mu m wavelength VUG DFB laser using a zero net strain InxGa1-xAsyP1-y well active structure grown at constant y
Author :
Kazmierski, C. ; Ougazzaden, A. ; Robein, D. ; Mathoorasing, D. ; Blez, M. ; Mircea, A.
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
7/8/1993 12:00:00 AM
Abstract :
A 20 GHz bandwidth VUG (V-on-U groove) DFB GaInAsP laser based on a zero net strain quaternary quantum well active structure grown at a constant phosphorus/arsenic ratio is described. The active structure is designed such that emission wavelength has excellent thermal stability in order to avoid gain peak shifts during two epitaxial regrowths. Using this active material, the authors show that high-performance high-speed DFB devices can be designed and fabricated.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; semiconductor lasers; 1.5 micron; 20 GHz; DFB laser; GaInAsP; MQW laser; V-on-U groove; emission wavelength; epitaxial regrowths; high-performance; high-speed DFB devices; quaternary quantum well active structure; thermal stability; zero net strain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930861
