DocumentCode :
996882
Title :
High-power 10%-tuning-bandwidth varactor-controlled impatt oscillator/amplifier
Author :
Braddock, P.W. ; Hodges, R.D.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Volume :
13
Issue :
7
fYear :
1977
Firstpage :
179
Lastpage :
181
Abstract :
A simple electronically tuned c.w. GaAs impatt/varactordiode oscillator/amplifier circuit is described which can be tuned over a 10% bandwidth at mid-X-band frequencies at a power level greater than 0.5 W as an oscillator, and greater than 0.8 W at the 6 dB-gain level as a reflection amplifier. Unambiguous electronic tuning without power jumps, frequency hops or `out-of-band¿ oscillations has been achieved by paying special attention to the circuit design.
Keywords :
IMPATT diodes; microwave amplifiers; microwave oscillators; solid-state microwave circuits; tuning; varactors; 10% tuning bandwidth; GaAs IMPATT diode; X-band frequencies; electronic tuning; reflection amplifier; varactor controlled IMPATT oscillator/amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770132
Filename :
4249278
Link To Document :
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