Importance of BEOL Modeling in Single Event Effect Analysis

Author

Tang, Henry H K ; Murray, Conal E. ; Fiorenza, Giovanni ; Rodbell, Kenneth P. ; Gordon, Michael S.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights

Volume

54

Issue

6

fYear

2007

Firstpage

2162

Lastpage

2167

Abstract

Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new device structures for 65 nm CMOS technologies and beyond. The salient features of the new modeling methods are illustrated by the simulation results taken from several case studies of particle-induced radiation problems in the back end.

Keywords

CMOS integrated circuits; radiation effects; BEOL modeling; CMOS technologies; alpha-particle radiation effects; back-end-of-line modeling; complex back-end-of-line topologies; energy deposition; ion radiation effects; particle transport simulation; particle-induced radiation problems; single event effect analysis; single event upset; size 65 nm; soft fail rate; Analytical models; CMOS technology; Discrete event simulation; Geometry; Neutrons; Protons; Radiation effects; Semiconductor device modeling; Single event upset; Solid modeling; Alpha-particle radiation effects; energy deposition; ion radiation effects; radiation effects; simulations; single event effect; single event upset; soft fail rate;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.909986

Filename

4395084