Title :
Importance of BEOL Modeling in Single Event Effect Analysis
Author :
Tang, Henry H K ; Murray, Conal E. ; Fiorenza, Giovanni ; Rodbell, Kenneth P. ; Gordon, Michael S.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights
Abstract :
Novel techniques have been developed to simulate particle transport in arbitrarily complex back-end-of-line topologies. They are shown to be critical for single event effect analyses of new device structures for 65 nm CMOS technologies and beyond. The salient features of the new modeling methods are illustrated by the simulation results taken from several case studies of particle-induced radiation problems in the back end.
Keywords :
CMOS integrated circuits; radiation effects; BEOL modeling; CMOS technologies; alpha-particle radiation effects; back-end-of-line modeling; complex back-end-of-line topologies; energy deposition; ion radiation effects; particle transport simulation; particle-induced radiation problems; single event effect analysis; single event upset; size 65 nm; soft fail rate; Analytical models; CMOS technology; Discrete event simulation; Geometry; Neutrons; Protons; Radiation effects; Semiconductor device modeling; Single event upset; Solid modeling; Alpha-particle radiation effects; energy deposition; ion radiation effects; radiation effects; simulations; single event effect; single event upset; soft fail rate;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.909986
