Title :
Concentration dependence of magnetic and transport properties of amorphous Gd-Ge alloys
Author :
Gambino, Richard J. ; McGuire, Thomas R.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY
fDate :
9/1/1983 12:00:00 AM
Abstract :
The properties of Gd100-xGexamorphous alloys show an unusual dependence on composition. At x = 50% the saturation magnetization and Curie temperature decrease precipitously. The resistivity and spontaneous Hall effect also have complex behavior in the same composition region. There is a maximum in ρ at 43% Ge superimposed on a more monotonic increase with increasing x. Also at x = 43% there is a pronounced maximum in the tangent of the Hall angle, ρH/ρ. In addition to the peak at 43%, the resistivity also increases steeply above 75% Ge extrapolating toward values found for semiconducting, amorphous germanium. The Hall conductivity (ρH/ρ2), on the other hand, decreases monotonically with increasing x over the entire composition range, x = 20 to 82%. In general, the spontaneous Hall effect in this metal-semiconductor system can be understood in terms of the Berger "side jump" model.
Keywords :
Amorphous magnetic materials/devices; Hall effect; Amorphous magnetic materials; Amorphous materials; Atomic measurements; Conductivity; Copper alloys; Germanium alloys; Hall effect; Magnetic properties; Magnetic semiconductors; Saturation magnetization;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1983.1062623