Title :
Yield sensitivity of HEMT circuits to process parameter variations
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Moscow, ID
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors summarize the use of a graphical tool, yield factor histograms, to study the yield sensitivity of HEMT circuits to process parameter variations. A computer program called SPICENTER is used to incorporate the HEMT statistical physical model with a SPICE circuit model and then to generate the yield factor histograms and yield sensitivities as functions of the process parameters. The authors present the application of these tools to digital and microwave circuits. Two example HEMT circuits, a two-input NOR gate and an inverter chain, illustrate the concepts. Yield sensitivity is presented as yield percent change per parameter percent change
Keywords :
MMIC; Monte Carlo methods; circuit analysis computing; digital integrated circuits; field effect integrated circuits; high electron mobility transistors; sensitivity analysis; statistical analysis; HEMT circuits; Monte Carlo simulator; SPICE circuit model; SPICENTER; computer program; digital circuits; graphical tool; inverter chain; microwave circuits; process parameter variations; statistical physical model; two-input NOR gate; yield factor histograms; yield sensitivities; Circuits; Electrons; HEMTs; Histograms; Monte Carlo methods; NASA; Physics computing; SPICE; Transconductance; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
