Title :
Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM
Author :
Correas, Vincent ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Gasiot, G. ; Giot, D. ; Roche, P.
Author_Institution :
Front-End Technol. & Manuf., STMicroelectronics, Crolles
Abstract :
A simulation tool to predict the heavy ion cross section is proposed. A 20% average error between experimental and simulated results is shown for a SRAM in a commercial 130 nm CMOS technology. Input parameters are obtained by device or circuit simulations and no fitting parameters or empirical calibration with previous radiation testings is needed.
Keywords :
CMOS integrated circuits; SRAM chips; CMOS SRAM; CMOS technology; heavy ion cross sections; CMOS technology; Calibration; Circuit simulation; Circuit testing; Computer aided manufacturing; Design automation; Helium; Passivation; Predictive models; Random access memory; Cross section; PHISco; PMOS; SEU; heavy ion; passivation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910038
