Title :
High frequency saturation measurements of an InGaAs/InP waveguide photodetector
Author :
Williams, A.R. ; Kellner, A.L. ; Yu, Paul K. L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., La Jolla, CA, USA
fDate :
7/8/1993 12:00:00 AM
Abstract :
The high frequency saturation characteristics of an InGaAs/InP waveguide pion photodetector are measured. At a wavelength of 1.3 mu m, the detector has a responsivity of 0.5 A/W and a flat frequency response from 800 MHz to 20 GHz. With a bias of -4 V, the normalized frequency response of the detector remains unchanged when optical powers up to 10 mW are incident on the detector.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photodetectors; semiconductor device testing; -4 V; 1.3 micron; 10 mW; 800 MHz to 20 GHz; InGaAs-InP; PIN photodetector; high frequency saturation characteristics; normalized frequency response; pion photodetector; waveguide photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930866
