Author :
Warren, Kevin M. ; Sierawski, Brian D. ; Reed, Robert A. ; Weller, Robert A. ; Carmichael, Carl ; Lesea, Austin ; Mendenhall, Marcus H. ; Dodd, Paul E. ; Schrimpf, Ron D. ; Massengill, Lloyd W. ; Hoang, Tan ; Wan, Hsing ; de Jong, J.L. ; Padovani, Rick ;
Abstract :
Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.
Keywords :
Monte Carlo methods; aerospace instrumentation; ion beam effects; radiation hardening (electronics); Monte-Carlo based on-orbit single event upset rate prediction; SPICE analysis; TCAD analysis; hardened-by-design circuit; heavy ion cross section data; multiple node charge collection; radiation hardened by design latch; Application software; Error analysis; Latches; Monte Carlo methods; Nuclear electronics; Object oriented modeling; Predictive models; Radiation hardening; Single event upset; Space charge; Geant4; MRED; SEU; rate prediction;
