Title :
Leakage current enhancement in impatt oscillators by photoexcitation
Author :
Vyas, H.P. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical & Systems Engineering Department, Troy, USA
Abstract :
A technique for investigating the rÿle of dynamic or effective leakage current in the r.f. performance of an impatt diode is described. The technique involves the design of a device structure and microwave cavity which permits the leakage current to be varied externally by photogeneration of carriers, and is compatible with c.w. operation. Typical results for flat-profile single-drift X-band silicon are a 10% reduction in power and a 10 MHz increase in frequency at a photo/bias-current ration of 0.005.
Keywords :
IMPATT diodes; leakage currents; microwave oscillators; solid-state microwave circuits; IMPATT diode; IMPATT oscillators; RF performance; flat profile single drift X-band Si; leakage current enhancement; microwave cavity; photoexcitation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770139
