Thermally stable fully silicided Hf-silicide metal-gate electrode

Author

Park, Chang Seo ; Cho, Byung Jin ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., National Univ. of Singapore, Singapore

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

372

Lastpage

374

Abstract

We demonstrate, for the first time, thermally stable fully silicided (FUSI) Hf-silicide gate electrode whose work function (4.2 eV) is very close to that of n⁺ polysilicon. No polysilicon depletion effect and excellent thermal stability with negligible change in equivalent oxide thickness and flatband voltage even after high-temperature annealing at 950 °C are demonstrated. These results indicate that FUSI Hf-silicide is a promising candidate for n-MOSFET metal-gate electrode for dual-metal CMOS process.

Keywords

CMOS integrated circuits; MOSFET; annealing; electrodes; hafnium; semiconductor device metallisation; thermal stability; work function; 4.2 eV; 950 C; dual-metal CMOS process; dual-metal-gate; equivalent oxide thickness; flatband voltage; high-temperature annealing; n-MOSFET metal-gate electrode; n⁺ polysilicon; polysilicon depletion effect; thermal stability; thermally stable fully silicided Hf-silicide metal-gate electrode; work function; Annealing; CMOS process; Dielectric substrates; Electrodes; Hafnium; MOSFET circuits; Silicidation; Silicides; Thermal stability; Tungsten; CMOS; Hf-silicide and workfunction; dual-metal-gate; silicide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.829043

Filename

1302230