Schottky Barrier Contact-Based RF MEMS Switch

Author

Pillans, Brandon ; Morris, Frank ; Chahal, Prem ; Frazier, Gary ; Lee, Jeong-Bong

Author_Institution

Raytheon Co., Dallas, TX

Volume

17

Issue

6

fYear

2008

Firstpage

1439

Lastpage

1446

Abstract

This paper presents the design, fabrication, and measurement results for a novel Schottky barrier contact-based radio frequency (RF) microelectromechanical systems (MEMS) switch. This Schottky barrier contact allows one not only to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased but also conduct current in a forward biased state. Forward biasing the switch recombines trapped charges, thus extending the lifetime of the switch. This paper intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device.

Keywords

Schottky barriers; microswitches; RF MEMS switch; Schottky barrier contact; capacitive mode; forward biased state; radio frequency microelectromechanical systems switch; solid-state electronics; Contacts; Fabrication; Frequency measurement; Microelectromechanical systems; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Schottky barriers; Spontaneous emission; Switches; Microelectromechanical devices; Schottky barriers; microwave switches; reliability; semiconductor materials;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2008.2007227

Filename

4681905