• DocumentCode
    997053
  • Title

    High-level injection in the epilayer of the I2L transistor

  • Author

    Yu, Kaiyuan

  • Author_Institution
    Bell-Northern Research, Ottawa, Canada
  • Volume
    13
  • Issue
    7
  • fYear
    1977
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    The simple classical treatment of high-level injection in the epi region of the I2L transistor predicts an increase dof intrinsic ß (ratio of electron to hole current) with increasing VBE. However, a careful consideration of the coupling between the hole and electron current predicts a decrease of ß, which was confirmed by experiment.
  • Keywords
    bipolar transistors; integrated logic circuits; semiconductor device models; I2L transistor; epilayer; high level injection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770148
  • Filename
    4249294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997053