• DocumentCode
    997104
  • Title

    DC and temperature dependent characteristics of InP double heterostructure bipolar transistors with quaternary collector

  • Author

    McAlister, S.P. ; Abid, Z.-E. ; McKinnon, W.R. ; Davies, Mike

  • Author_Institution
    Inst. of Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • Volume
    29
  • Issue
    16
  • fYear
    1993
  • Firstpage
    1415
  • Lastpage
    1417
  • Abstract
    Reports the first study of the temperature dependence of the DC characteristics of InP-based double heterostructure bipolar transistors which have a quaternary collector. The quaternary layer was spaced away from the base-collector junction to improve the HBT characteristics. The devices exhibited useful gain over seven orders of magnitude of current and had breakdown voltages of approximately 8 V. The DC gain decreased with decreasing temperature whereas the ideality factors increased.
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; indium compounds; 8 V; DC characteristics; InP; base-collector junction; breakdown voltages; double heterostructure bipolar transistors; gain; ideality factors; quaternary collector; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930948
  • Filename
    252466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997104