Title :
DC and temperature dependent characteristics of InP double heterostructure bipolar transistors with quaternary collector
Author :
McAlister, S.P. ; Abid, Z.-E. ; McKinnon, W.R. ; Davies, Mike
Author_Institution :
Inst. of Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
Reports the first study of the temperature dependence of the DC characteristics of InP-based double heterostructure bipolar transistors which have a quaternary collector. The quaternary layer was spaced away from the base-collector junction to improve the HBT characteristics. The devices exhibited useful gain over seven orders of magnitude of current and had breakdown voltages of approximately 8 V. The DC gain decreased with decreasing temperature whereas the ideality factors increased.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; 8 V; DC characteristics; InP; base-collector junction; breakdown voltages; double heterostructure bipolar transistors; gain; ideality factors; quaternary collector; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930948
