Title :
A novel 25-nm modified Schottky-barrier FinFET with high performance
Author :
Tsui, Bing-Yue ; Lin, Chia-Pin
fDate :
6/1/2004 12:00:00 AM
Abstract :
High-performance modified Schottky barrier (MSB) FinFET with 25-nm channel length and fully silicided source/drain (S/D) is proposed for the first time. Using an implant-to-silicide technique, an ultrashort and defect-free S/D extension can be formed at temperature as low as 600 °C. The MSB FinFET exhibits better current-voltage characteristics than those of published Schottky barrier devices and FinFETs. With 4-nm-thick gate oxide, the Ion/Ioff current ratio higher than 109 is achieved. The subthreshold swing of 25-nm and 49-nm MSB FinFETs is 83 and 64.5 mV/dec at room temperature. The advantage of low thermal budget relaxes the thermal stability issue for metal gate/high-κ dielectric integration. It is believed that the proposed MSB FinFET would be a very promising nano device.
Keywords :
Schottky barriers; field effect transistors; silicon-on-insulator; thermal stability; 25 nm; 4 nm; 49 nm; 600 C; dielectric integration; implant-to-silicide technique; modified Schottky-barrier FinFET; silicided source/drain; silicon-on-insulator; thermal stability; Dielectrics; Doping; Etching; Fabrication; FinFETs; Lithography; MOSFETs; Schottky barriers; Silicides; Temperature; FinFET; SOI; Schottky barrier; silicon-on-insulator;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.828980