• DocumentCode
    997236
  • Title

    Passive modelocking of semiconductor lasers with tunable group velocity dispersion cavity

  • Author

    Azouz, Ahmed ; Stelmakh, N. ; Lourtioz, J.-M.

  • Author_Institution
    Inst. d´Electron. Fondamentale, Paris XI Univ., Orsay, France
  • Volume
    29
  • Issue
    16
  • fYear
    1993
  • Firstpage
    1437
  • Lastpage
    1438
  • Abstract
    Passive (hybrid) modelocking of AlGaAs lasers in an external cavity with high tunable group-velocity-dispersion (GVD) is reported. An internal grating compressor is used to continuously vary the intracavity GVD while a second grating compressor serves to compress the output pulses. Mode-locking is only found to occur for positive (normal) GVD. At optimum pulse compression, the dispersion of the external compressor is measured to linearly increase with intracavity dispersion. The large chirp amplitude detected at nearly-zero intracavity GVD as well as the general evolution of pulse parameters are shown to be well described by a modelocked laser model including fast laser gain saturation.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mode locking; semiconductor lasers; AlGaAs lasers; III-V semiconductors; chirp amplitude; external cavity; internal grating compressor; intracavity GVD; laser gain saturation; output pulses; pulse parameters; semiconductor lasers; tunable group velocity dispersion cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930962
  • Filename
    252480