DocumentCode
997236
Title
Passive modelocking of semiconductor lasers with tunable group velocity dispersion cavity
Author
Azouz, Ahmed ; Stelmakh, N. ; Lourtioz, J.-M.
Author_Institution
Inst. d´Electron. Fondamentale, Paris XI Univ., Orsay, France
Volume
29
Issue
16
fYear
1993
Firstpage
1437
Lastpage
1438
Abstract
Passive (hybrid) modelocking of AlGaAs lasers in an external cavity with high tunable group-velocity-dispersion (GVD) is reported. An internal grating compressor is used to continuously vary the intracavity GVD while a second grating compressor serves to compress the output pulses. Mode-locking is only found to occur for positive (normal) GVD. At optimum pulse compression, the dispersion of the external compressor is measured to linearly increase with intracavity dispersion. The large chirp amplitude detected at nearly-zero intracavity GVD as well as the general evolution of pulse parameters are shown to be well described by a modelocked laser model including fast laser gain saturation.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mode locking; semiconductor lasers; AlGaAs lasers; III-V semiconductors; chirp amplitude; external cavity; internal grating compressor; intracavity GVD; laser gain saturation; output pulses; pulse parameters; semiconductor lasers; tunable group velocity dispersion cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930962
Filename
252480
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