• DocumentCode
    997291
  • Title

    Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.s

  • Author

    Hill, Graeme ; Robson, P.N. ; Majerfeld, A. ; Fawcett, W.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    13
  • Issue
    8
  • fYear
    1977
  • Firstpage
    235
  • Lastpage
    236
  • Abstract
    The effect of ionised impurity scattering on the transient drift velocity of electrons in short-gate GaAs and InP field-effect transistors is investigated by Monte Carlo techniques.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; FET; GaAs; InP; Monte Carlo techniques; electron transit time; field effect transistors; ionised impurity scattering; transient drift velocity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770171
  • Filename
    4249318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997291