DocumentCode :
997520
Title :
Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction
Author :
Lu, Liqing ; Bryant, Angus T. ; Santi, Enrico ; Palmer, Patrick R. ; Hudgins, Jerry L.
Author_Institution :
South Carolina Univ., Columbia
Volume :
23
Issue :
1
fYear :
2008
Firstpage :
198
Lastpage :
205
Abstract :
In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.
Keywords :
finite element analysis; p-i-n diodes; power semiconductor diodes; carrier lifetime zoning; fast pin diodes; finite-element simulations; forward characteristic; high-voltage diodes; local lifetime control; parameter extraction; power semiconductor modeling; reverse recovery measurement; Charge carrier lifetime; Electromagnetic interference; Finite element methods; Fourier series; P-i-n diodes; Parameter extraction; Power semiconductor switches; Predictive models; Semiconductor diodes; Voltage; Lifetime control; p-i-n diode model; physics-based model; power semiconductor modeling; variable lifetime;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2007.911825
Filename :
4395161
Link To Document :
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