DocumentCode :
997637
Title :
High-efficiency and high-peak-power InP transferred-electron oscillators
Author :
Mun, Jungtae
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume :
13
Issue :
10
fYear :
1977
Firstpage :
275
Lastpage :
276
Abstract :
It has been demonstrated that a current-limiting cathode contact can be used to improve the performance of relatively thick vapour eptaxial InP transferred-electron devices. A peak power of 120 W with 18% efficiency at 5 GHz has been obtained from 34 ¿m-thick active-layer devices with silver tin-alloy metal contacts.
Keywords :
Gunn oscillators; 5 GHz; InP; current limiting cathode contact; high efficiency oscillators; peak power; transferred electron oscillators;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770203
Filename :
4249352
Link To Document :
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