Title :
A new MOSFET output conductance measurement technique
Author :
Akram, M. Faheem ; Plummer, James D. ; Shott, John D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
10/1/1993 12:00:00 AM
Abstract :
A new technique is presented for accurate measurement of the output conductance of a metal-oxide semiconductor field effect transistor (MOSFET). This technique allows the measurement of output conductance down to the sub μS region with an accuracy of better than 1%. Measurements in this range of output conductance are plagued by stray capacitances and noise. The new technique effectively combats these sources of error. The above-mentioned accuracy is maintained even when the susceptance due to the stray capacitance is as much as five times the conductance being measured
Keywords :
characteristics measurement; electrical conductivity measurement; insulated gate field effect transistors; MOSFET output conductance measurement; error; lock-in amplifier; metal-oxide semiconductor field effect transistor; noise; precision current source; stray capacitances; Capacitance; Current measurement; Electrical resistance measurement; FETs; Integrated circuit measurements; MOSFET circuits; Measurement techniques; Noise measurement; Operational amplifiers; Threshold voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
