The effects of stress relaxation and anisotropic magnetostriction on charged walls in ion implanted garnets

This paper reviews present understanding and presents new data on the effects of ion implantation on garnet materials and on the mechanisms giving rise to charged walls at boundaries between implanted and unimplanted regions. It is shown that uniaxial anisotropy parallel to pattern boundaries, which is due to stress relaxation normal to pattern edges, is necessary for the formation of charged walls. Furthermore. it is shown that, whereas early reseachers ascribed the three-fold symmetric behavior of charged walls in the ion implanted layers of