Title :
GaAs power f.e.t.s with electron-beam-defined gates
Author :
Macksey, H.M. ; Blocker, T.G. ; Doerbeck, F.H.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
The fabrication of GaAs power f.e.t.s having 1 ¿m electron-beam-defined gates with 4800 ¿m total gatewidth is described. The microwave performance at X-band is compared with that of conventionally defined devices having 2 ¿m gate lengths.
Keywords :
Schottky gate field effect transistors; electron beam applications; electron resists; gallium arsenide; semiconductor technology; solid-state microwave devices; 1 micron long gates; 4800 micron gate width; GaAs power FETs; X-band FET; electron beam defined gates; fabrication; microwave performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770228
