• DocumentCode
    998038
  • Title

    Series-connected GaAs and Si IMPATT-diode chips: some new results

  • Author

    Rucker, C.T. ; Amoss, J.W. ; Hill, G.N. ; Cox, N.W.

  • Author_Institution
    Georgia Institute of Technology, Solid State Sciences Division, Engineering Experiment Station, Atlanta, USA
  • Volume
    13
  • Issue
    11
  • fYear
    1977
  • Firstpage
    331
  • Lastpage
    332
  • Abstract
    Gallium-arsenide Schottky low¿high¿low IMPATT-diode chips have been successfully combined in series. A maximum c.w. power output of 22.5 W has been repeatedly obtained in X-band by using six 4-W 0.2-mm-diameter mesa GaAs devices. After careful preselection of GaAs chips (yield ¿ 20%), the GaAs devices combined more readily than did silicon p+¿n¿n+ impatt chips.
  • Keywords
    IMPATT diodes; gallium arsenide; 22.5 W CW power output; GaAs IMPATT diode chips; Si IMPATT diode chips; X-band; mesa GaAs devices; series connected IMPATT diode chips; six mesa operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770241
  • Filename
    4249391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998038