Title :
Measurements of the close-to-carrier f.m. noise of pulsed InP t.e.o.s primed by an external oscillator
Author_Institution :
Royal Signals & Radar Establishment, Malvern, UK
Abstract :
Experiments on phase-primed, pulsed InP transferred-electron oscillators show that the noise due to priming jitter can be reduced below the inherent noise level of the oscillator. Measurements are presented on the magnitude and spectrum of the oscillator noise.
Keywords :
Gunn oscillators; III-V semiconductors; electron device noise; indium compounds; close to carrier FM noise; oscillator noise; phase primed; priming jitter; pulsed InP transferred electron oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770252
