DocumentCode :
998422
Title :
Finite-Size Effect on Band Structure and Photoluminescence of Semiconductor Nanocrystals
Author :
Lang, X.Y. ; Zheng, W.T. ; Jiang, Q.
Author_Institution :
Jilin Univ., Changchun
Volume :
7
Issue :
1
fYear :
2008
Firstpage :
5
Lastpage :
9
Abstract :
Based on a model for size-dependent atomic cohesive energy of nanocrystals, a simple and unified model, without any adjustable parameter, has been established for finite size effect on shifts of valence and conduction band edges [DeltaEV(D) and DeltaEC(D)], and bandgap expansion [DeltaEG(D)| of semiconductor nanocrystals, where Delta denotes the expansion and D is the size of nanocrystals. In the light of this model, DeltaEV(D), DeltaEC(D), and DeltaEG(D) functions increase with dropping D in comparison with the corresponding bulk counterparts. The available experimental results of Si, CdS, ZnSe, and ZnTe nanocrystals confirm the validity of model.
Keywords :
II-VI semiconductors; cadmium compounds; conduction bands; elemental semiconductors; nanostructured materials; photoluminescence; silicon; valence bands; zinc compounds; CdS; Si; ZnSe; ZnTe; band structure; conduction band; finite-size effect; photoluminescence; semiconductor nanocrystals; valence band; Charge carrier processes; Effective mass; Lattices; Matter waves; Nanocrystals; Optical devices; Photoluminescence; Photonic band gap; Potential well; Zinc compounds; Band gap; Nanocrystal; Semiconductor; Size effect; nanocrystals; semiconductor; size effect;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2007.913426
Filename :
4395255
Link To Document :
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