Title :
Al0.35Ga0.65N pin diodes exhibiting sub-fA leakage currents
Author :
Aslam, S. ; Yan, F. ; Franz, D. ; Ferguson, I. ; Asghar, A. ; Payne, A.
Author_Institution :
Raytheon ITSS, Lanham, MD, USA
fDate :
7/7/2005 12:00:00 AM
Abstract :
Using conventional photolithography, Al0.35Ga0.65N pin diodes have been fabricated that exhibit extremely low reverse bias leakage currents. Macroscopic I-V measurements from a statistical population of 64, 120 μm diameter, circular diodes gives a mean leakage current of 0.96 fA with a standard deviation of 0.90 fA at -0.5 V bias.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; p-i-n diodes; photolithography; wide band gap semiconductors; Al0.35Ga0.65N; circular diodes; leakage currents; photolithography; pin diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051268
