• DocumentCode
    998442
  • Title

    Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication

  • Author

    Jun, S.-I. ; McKnight, T.E. ; Melechko, A.V. ; Simpson, M.L. ; Rack, P.D.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of Tennessee, Knoxville, TN, USA
  • Volume
    41
  • Issue
    14
  • fYear
    2005
  • fDate
    7/7/2005 12:00:00 AM
  • Firstpage
    822
  • Lastpage
    823
  • Abstract
    To overcome deficiencies of sputtered silicon dioxide (SiO2) films the RF magnetron sputtering process was optimised using a full factorial design of experiment. The optimised SiO2 film has a 5.7 MV/cm breakdown field and a 6.2 nm/min deposition rate at 10 W/cm2 RF power, 3 mtorr pressure, 300°C substrate temperature, and 56 V substrate bias. Thin-film transistors were also fabricated and characterised to show potential and prospective applications of the optimised SiO2 films.
  • Keywords
    insulating thin films; silicon compounds; sputter deposition; thin film transistors; 3 mTorr; 300 C; 56 V; RF magnetron sputtering process; SiO2; full factorial design of experiment; reactively sputtered silicon oxide; sputtered silicon dioxide films; thin-film transistor fabrication;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051045
  • Filename
    1468059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998442