Title :
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
Author :
Ólafsson, H. Ö ; Gudjónsson, G. ; Allerstam, F. ; Sveinbjörnsson, E. Ö ; Rödle, T. ; Jos, R.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
7/7/2005 12:00:00 AM
Abstract :
Stable operation of normally-off high mobility 4H-SiC MOSFET transistors from room temperature up to 150°C is reported. The output current in saturation is decreased by about 20% at 150°C as compared to room temperature. This small decrease in current with temperature is attributed to a decrease in the field effect mobility due to phonon scattering.
Keywords :
electron mobility; high-temperature electronics; power MOSFET; semiconductor device reliability; silicon compounds; 150 C; SiC; field effect mobility; high mobility MOSFETs; output current; phonon scattering; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051833
