Title :
GaAs f.e.t.s with graded channel doping profiles
Author :
Williams, R.E. ; Shaw, D.W.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
Graded-channel GaAs f.e.t.s with the carrier concentration decreasing from the substrate¿epitaxial interface outwards are observed to exhibit more linear d.c. transfer characteristics, higher reverse gate breakdown voltages and lower 3rd-order intermodulation products than f.e.t.s fabricated from companion slices with uniform or flat doping profiles.
Keywords :
field effect transistors; gallium arsenide; semiconductor doping; vapour phase epitaxial growth; GaAs FETs; fabrication; graded channel doping profiles; higher reverse gate breakdown voltages; linearised DC transfer characteristics; reduced third order intermodulation products;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770297
