DocumentCode
998873
Title
White-light emission from GaAs m.o.s. structures
Author
Bayraktaroglu, B. ; Hartnagel, H.L.
Author_Institution
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume
14
Issue
15
fYear
1978
Firstpage
470
Lastpage
472
Abstract
Emission of light from GaAs m.o.s. structures with anodic native oxides is reported. The spectrum is continuous, covers the visible range and has substantial parts that have higher photon energies than the GaAs energy gap. A part of the emission therefore seems to originate from the amorphous native GaAs oxide with its wide energy gap of about 4.5 eV. The light appears white to the eye and its intensity, but not its spectral distribution, can be controlled by the bias applied to the m.o.s. structure.
Keywords
gallium arsenide; luminescent devices; metal-insulator-semiconductor structures; GaAs MOS structures; anodic native oxides; white light emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780316
Filename
4249476
Link To Document