• DocumentCode
    998925
  • Title

    Optimised doping profiles for speed-up of GaAs m.e.s.f.e.t.s

  • Author

    Kurumada, K.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    14
  • Issue
    15
  • fYear
    1978
  • Firstpage
    481
  • Lastpage
    482
  • Abstract
    Simulation of m.e.s.f.e.t. logic cell shows that discharging of the gate depletion is significantly slower than the charging process. The transient response with the charging/discharging is analytically connected to arbitrary doping profiles. Specific profiles with a doping peak near the substrate boundary can reduce this discharging delay remarkably.
  • Keywords
    Schottky gate field effect transistors; doping profiles; logic devices; semiconductor device models; GaAs MESFET; logic cell; optimised doping profiles; transient response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780322
  • Filename
    4249482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998925