DocumentCode :
998936
Title :
Logic functions using interacting two-state m.o.s. devices
Author :
Darwish, M.M. ; Board, K.
Author_Institution :
University College of Swansea, Department of Electrical Engineering, Swansea, UK
Volume :
14
Issue :
15
fYear :
1978
Firstpage :
482
Lastpage :
483
Abstract :
The turn-on and turn-off of a 2-state 2-terminal m.i.s. switching device is demonstrated by the introduction of an adjacent similar third electrode. Currents up to 30 times bigger have been switched off using the third terminal. The structure is then connected in a simple circuit to demonstrate first inverter action, and then the 2-input NOR gate function. The technology of the Structure is simple, the active region requiring no diffusions, and is m.o.s. compatible.
Keywords :
logic gates; metal-insulator-semiconductor devices; 2-input NOR gate function; MIS switching device; interacting two state MOS device; logic functions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780323
Filename :
4249483
Link To Document :
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