DocumentCode
998972
Title
Absolute noise characterisation of avalanche photodiodes
Author
Brain, M.C.
Author_Institution
Post Office Research Centre, Ipswich, UK
Volume
14
Issue
15
fYear
1978
Firstpage
485
Lastpage
487
Abstract
Excess noise in four types of commercially obtained avalanche photodiodes (a.p.d.s) has been measured absolutely, by comparing avalanche noise from the a.p.d. with shot noise from an illuminated p-i-n diode. The method used yields directly the noise-current spectral density, simplifies the deduction of the quantum efficiency keff and hence the true value of the multiplication factor, and ultimately yields a measured value of the noise parameter x.
Keywords
avalanche photodiodes; electron device noise; PIN diode; absolute noise characterisation; avalanche noise; avalanche photodiodes; excess noise; multiplication factor; noise current spectral density; p-i-n diode; quantum efficiency; shot noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780326
Filename
4249486
Link To Document