Title :
Absolute noise characterisation of avalanche photodiodes
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
Excess noise in four types of commercially obtained avalanche photodiodes (a.p.d.s) has been measured absolutely, by comparing avalanche noise from the a.p.d. with shot noise from an illuminated p-i-n diode. The method used yields directly the noise-current spectral density, simplifies the deduction of the quantum efficiency keff and hence the true value of the multiplication factor, and ultimately yields a measured value of the noise parameter x.
Keywords :
avalanche photodiodes; electron device noise; PIN diode; absolute noise characterisation; avalanche noise; avalanche photodiodes; excess noise; multiplication factor; noise current spectral density; p-i-n diode; quantum efficiency; shot noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780326