DocumentCode :
998972
Title :
Absolute noise characterisation of avalanche photodiodes
Author :
Brain, M.C.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Volume :
14
Issue :
15
fYear :
1978
Firstpage :
485
Lastpage :
487
Abstract :
Excess noise in four types of commercially obtained avalanche photodiodes (a.p.d.s) has been measured absolutely, by comparing avalanche noise from the a.p.d. with shot noise from an illuminated p-i-n diode. The method used yields directly the noise-current spectral density, simplifies the deduction of the quantum efficiency keff and hence the true value of the multiplication factor, and ultimately yields a measured value of the noise parameter x.
Keywords :
avalanche photodiodes; electron device noise; PIN diode; absolute noise characterisation; avalanche noise; avalanche photodiodes; excess noise; multiplication factor; noise current spectral density; p-i-n diode; quantum efficiency; shot noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780326
Filename :
4249486
Link To Document :
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