Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL

Author

Kurdi, M.E. ; Bouchoule, S. ; Bousseksou, A. ; Sagnes, I. ; Plais, A. ; Strassner, M. ; Symonds, C. ; Garnache, A. ; Jacquet, J.

Author_Institution

Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France

Volume

40

Issue

11

fYear

2004

fDate

5/27/2004 12:00:00 AM

Firstpage

671

Lastpage

672

Abstract

A report is presented on room-temperature (RT) continuous-wave (CW) laser emission at 1.55 μm of an all InP-based electrically-pumped vertical external-cavity surface-emitting laser (EP-VECSEL). Threshold currents of 1.4 kA/cm² and output powers of up to 0.3 mW were measured under CW operation at RT. A maximum output power of 2.7 mW has been obtained in quasi-CW operation at a heatsink temperature of 10.5°C. This first result demonstrates that EP-VECSELs are a potential candidate for the realisation of compact vertical-cavity emitting sources.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; surface emitting lasers; 0.3 mW; 1.55 micron; 10.5 degC; 2.7 mW; 293 to 298 K; InP based electrically pumped laser; InP-InGaAsP; heat sink temperature; quasiCW operation; room temperature continuous-wave laser operation; threshold currents; vertical external cavity surface emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20040445

Filename

1302796