Title :
InGaAsP/InP d.h. l.e.d.s for fibre-optical communications
Author :
Umebu, Itsuo ; Hasegawa, Osamu ; Akita, Kenzo
Author_Institution :
Fujitsu Laboratories Ltd., Semiconductor Laboratories, Kawasaki, Japan
Abstract :
InGaAsP l.e.d.s emitting at 1.24 ¿m are fabricated. Their characteristics at 100 mA are as follows: output power coupled into the fibre of 77 ¿W, a spectral halfwidth of 0.1 ¿m and a cutoff frequency of 70 MHz. The cutoff frequencies are proportional to the square root of the bias current. The recombination coefficient is estimated to be 5 × 10¿10cm3/s
Keywords :
III-V semiconductors; light emitting diodes; optical communication equipment; 1.24 micron LEDs; 70 MHz cutoff frequency; 77 microW output power coupled into fibre; InGaAsP/InP DH LEDs; characteristics; optical fibre communication equipment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780335
