• DocumentCode
    999066
  • Title

    Optical measurement of silicon membrane and beam thickness using a reflectance spectrometer

  • Author

    Bernstein, J. ; Denison, Mark ; Grieff, P.

  • Author_Institution
    Charles Stark Draper Lab., Cambridge, MA, USA
  • Volume
    35
  • Issue
    6
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    801
  • Lastpage
    803
  • Abstract
    An optical technique for measuring the thickness of silicon membranes and beams such as those used in micromechanical devices is presented. The measurement, based on reflectance spectrometry, is rapid and nondestructive. The reflectance-spectrometry technique can be used to measure silicon membrane thickness in the range from 0.1 to 5 μm
  • Keywords
    elemental semiconductors; membranes; reflectometry; semiconductor thin films; silicon; spectrometers; thickness measurement; 0.1 to 5 micron; 480 to 800 nm; Si; beam thickness measurement; membrane thickness measurement; micromechanical devices; optical technique; reflectance spectrometry; semiconductor; Annealing; Biomembranes; Capacitive sensors; Instruments; Optical films; Optical sensors; Reflectivity; Silicon; Spectroscopy; Thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2535
  • Filename
    2535