Title :
GaAs Hall-effect devices fabricated by ion-implantation technique
Author :
Inada, Taroh ; Ohkubo, Tatsuya ; Kato, Shigeki ; Kitahara, Masahiro ; Kanda, Yozo ; Hara, Tohru
Author_Institution :
Hosei University, College of Engineering, Koganei, Japan
Abstract :
Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.
Keywords :
Hall effect devices; III-V semiconductors; gallium arsenide; ion implantation; 1.4 mV imbalance voltage at 1 mA, 0 gauss; 85 mV Hall voltage at 1 mA, 5 kgauss; GaAs Hall effect devices; Se implanted n layers; fabrication; ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780338
