• DocumentCode
    999181
  • Title

    High-order derivatives in measurement of mobility in HEMT devices

  • Author

    Rafael, G. ; Fernández, T. ; Rodriguez-Tellez, J. ; Tazón, A. ; Mediavilla, A.

  • Author_Institution
    Dept. of Commun. Eng., Univ. of Cantabria, Spain
  • Volume
    40
  • Issue
    11
  • fYear
    2004
  • fDate
    5/27/2004 12:00:00 AM
  • Firstpage
    700
  • Lastpage
    702
  • Abstract
    A novel and more accurate approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The results presented consider the behaviour of mobility in the linear and saturation bias regions.
  • Keywords
    III-V semiconductors; electron mobility; gallium arsenide; high electron mobility transistors; semiconductor device measurement; GaAs; GaAs HEMT devices; high electron mobility transistor; high order derivatives; linear bias regions; mobility equation; mobility measurement; saturation bias regions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040333
  • Filename
    1302817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999181