DocumentCode
999204
Title
Maximum electric field in high-field domain
Author
Shur, M.
Author_Institution
Oakland University, School of Engineering, Rochester, USA
Volume
14
Issue
16
fYear
1978
Firstpage
521
Lastpage
522
Abstract
A simple formula relating the domain voltage to the maximum domain field and device parameters is derived. The results are used to analyse the limitations of the parameters of GaAs and InP transferred-electron devices related to the impact ionisation within a high-field domain.
Keywords
Gunn devices; III-V semiconductors; electric domains; gallium arsenide; impact ionisation; indium compounds; semiconductor device models; GaAs Gunn devices; III-V semiconductors; InP Gunn devices; high field domain; impact ionisation; maximum electric field;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780350
Filename
4249511
Link To Document