Title :
Maximum electric field in high-field domain
Author_Institution :
Oakland University, School of Engineering, Rochester, USA
Abstract :
A simple formula relating the domain voltage to the maximum domain field and device parameters is derived. The results are used to analyse the limitations of the parameters of GaAs and InP transferred-electron devices related to the impact ionisation within a high-field domain.
Keywords :
Gunn devices; III-V semiconductors; electric domains; gallium arsenide; impact ionisation; indium compounds; semiconductor device models; GaAs Gunn devices; III-V semiconductors; InP Gunn devices; high field domain; impact ionisation; maximum electric field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780350
