• DocumentCode
    999214
  • Title

    High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s

  • Author

    Donzelli, G.P.

  • Author_Institution
    CISE SpA, Segrate, Italy
  • Volume
    14
  • Issue
    16
  • fYear
    1978
  • Firstpage
    523
  • Lastpage
    524
  • Abstract
    A high-yield self-alignment technique for submicrometer GaAs m.e.s.f.e.t.s is described. This method allows the production of submicrometre gate lengths and source-drain spacings by means of standard contact photolithography without requiring a particularly fine geometry on the masks. A 0.5 ¿m long gate and a source-drain spacing of 2 ¿m were obtained.
  • Keywords
    Schottky gate field effect transistors; gallium arsenide; photolithography; semiconductor technology; solid-state microwave devices; 0.5 micron gate length; high yield self alignment method; microwave MESFETs; standard contact photolithography; submicron GaAs MESFETs; submicron gate lengths;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780351
  • Filename
    4249512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999214