DocumentCode
999229
Title
Temperature measurements of telecommunication lasers on a micrometre scale
Author
Mansanares, A.M. ; Fournier, D. ; Boccara, A.C.
Author_Institution
Univ. Pierre et Marie Curie, Paris, France
Volume
29
Issue
23
fYear
1993
Firstpage
2045
Lastpage
2047
Abstract
Temperature maps of laser diode facets obtained by photothermal reflectance microscopy are presented. Biased double heterojunction InGaAsP lasers were investigated. The temperature images reveal the influence of laser mode on the spatial distribution of the heat dissipation in the device. Moreover, a study of the modulated reflectance as a function of the injection current is achieved.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser variables measurement; photothermal effects; reflectivity; semiconductor lasers; temperature distribution; temperature measurement; DFB laser; InGaAsP-InP; biased double heterojunction InGaAsP lasers; heat dissipation spatial distribution; injection current; laser mode; micrometre scale; modulated reflectance; photothermal reflectance microscopy; telecommunication lasers; temperature maps; temperature measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931366
Filename
253950
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