Title :
DFB and DBR lasers emitting at 980 nm
Author :
Nichols, D.T. ; Lopata, J. ; Hobson, W.S. ; Sciortino, P.F. ; Dutta, N.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The performance of DFB and DBR ridge waveguide lasers operating at 980 nm is reported. The DBR devices used a single growth step and gave singlemode output powers as high as 30 mW. The DFB devices used a two-step growth process in which the lower cladding and active regions were grown fast, the gratings were etched and then the upper cladding and p-contact layers were regrown on top of the grating. The DFB devices gave output powers as high as 75 mW.
Keywords :
diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; integrated optics; laser modes; laser transitions; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor lasers; 30 mW; 75 mW; 980 nm; DBR lasers; DFB devices; GaAs-AlGaAs-InGaAs; active regions; gratings; lower cladding; p-contact layers; ridge waveguide lasers; single growth step; singlemode output powers; two-step growth process; upper cladding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931359
