Oscillators Based on Monolithically Integrated AlN TFBARs

Author

Norling, Martin ; Enlund, Johannes ; Katardjiev, Ilia ; Gevorgian, Spartak

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

Volume

56

Issue

12

fYear

2008

Firstpage

3209

Lastpage

3216

Abstract

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits.

Keywords

Ge-Si alloys; III-V semiconductors; MMIC oscillators; acoustic microwave devices; acoustic resonators; aluminium compounds; bulk acoustic wave devices; flip-chip devices; heterojunction bipolar transistors; microwave bipolar transistors; multichip modules; semiconductor device noise; silicon-on-insulator; thin film devices; wide band gap semiconductors; AlN-Si-SiGe; SiGe HBT; SiGe transistor; carrier substrate; flip-chip mount; frequency 2 GHz; microwave oscillator; monolithically integrated TFBAR; noise; oscillator circuit; passive components; silicon-on-silicon multichip module; thin film bulk acoustic resonator; Acoustic resonator; hybrid integration; multichip module (MCM); oscillator; thin-film bulk acoustic resonator (TFBAR); thin-film device;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.2007091

Filename

4682648