Title :
Zinc contamination and misplaced p-n junctions in InP¿GaInPAs d.h. lasers
Author :
Coleman, J.J. ; Nash, F.R.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
A serious problem involving the use of Zn in the formation of GaxIn1¿xPyAs1¿y double-heterostructure lasers is identified. Contamination of epitaxial layer solutions from Zn is shown to result in misplaced p-n junctions in these devices. The improvement in the laser characteristics of devices having correctly placed p-n junctions is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor junction lasers; InP-GaInPAs double heterostructure lasers; Zn contamination; epitaxial layer solutions; laser output power characteristics; misplaced p-n junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780378
