Surface morphology and photoluminescence of InAs quantum dots grown on [11~0]-oriented streaked islands under ultra-low V/III ratio

Author

Tang, Shiang Feng ; Shih Yen Lin ; Yang, San Te ; Chiang, Cheng Der ; Cherng, Ya Tung ; Shen, Hui Tang ; Nee, Tzer En ; Lin, Ray Ming ; Hsu, Min Yu

Author_Institution

Mater. & Electro-Opt. Div., Chung Shan Inst. of Sci. & Technol., Taoyuan, Taiwan

Volume

3

Issue

2

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

275

Lastpage

280

Abstract

The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on [001] 2/sup 0/ off toward an [111] n-type GaAs substrate, InAs island growth with /spl sim/1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [11~0]-orientation of the GaAs substrate.

Keywords

III-V semiconductors; desorption; indium compounds; island structure; photoluminescence; semiconductor epitaxial layers; semiconductor quantum dots; surface morphology; GaAs; In adatoms; InAs; InAs island growth; InAs quantum dots; [111] n-type GaAs substrate; [11~0]-oriented streaked islands; desorbed In atoms; organometallic vapor phase epitaxy; self-assembled InAs QD; surface morphology; temperature-dependent photoluminescence spectra; Atomic force microscopy; Atomic layer deposition; Chemical technology; Epitaxial growth; Gallium arsenide; Photoluminescence; Quantum dots; Substrates; Surface morphology; US Department of Transportation;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.828534

Filename

1303522